Temperature dependence of current conduction in semi-insulating 4H-SiC epitaxial layer

Temperature Dependence of Current Conduction in Semi-Insulating 4H-SiC Epitaxial Layer

Characterization of Deep Levels in n-type and Semi-Insulating 4H-SiC Epitaxial Layers by Thermally Stimulated Current Spectroscopy

Temperature-dependence of Epitaxial Graphene Formation on SiC(0001)

The formation of epitaxial graphene on SiC(0001) surfaces is studied using atomic force microscopy, Auger electron spectroscopy, electron diffraction, Raman spectroscopy, and electrical measurements. Starting from hydrogen-annealed surfaces, graphene formation by vacuum annealing is observed to begin at about 1150°C, with the overall step-terrace arrangement of the surface being preserved but w...

1 Temperature - dependence of Epitaxial Graphene Formation on SiC ( 0001 )

The formation of epitaxial graphene on SiC(0001) surfaces is studied using atomic force microscopy, Auger electron spectroscopy, electron diffraction, Raman spectroscopy, and electrical measurements. Starting from hydrogen-annealed surfaces, graphene formation by vacuum annealing is observed to begin at about 1150°C, with the overall step-terrace arrangement of the surface being preserved but w...

Nanomanipulation of ridges in few-layer epitaxial graphene grown on the carbon face of 4H-SiC

The atomic force microscope (AFM) is used to study the morphology of graphene grown on 4H-SiC(0001̄). A mesh-like network of ridges with high curvature is revealed that bound atomically flat, tile-like facets of few-layer graphene (FLG). To further study the structural properties of the ridge network, nanomanipulation experiments are performed using an AFM tip to deform the ridges in both the ve...